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| CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2005.01.12 Page No. : 1/4 BTP3906N3 Description * Complementary to BTN3904N3. Symbol BTP3906N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25C) Power Dissipation (TC=25C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Free air condition Symbol VCBO VCEO VEBO IC PD PD RJA RJC Tj Tstg Limits -40 -40 -5 -200 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V mA mW mW C/W C/W C C BTP3906N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICEX IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(sat) *hFE *hFE *hFE *hFE *hFE fT Cob Min. -40 -40 -5 -0.65 60 80 100 60 30 250 Typ. -0.05 -0.12 -0.76 -0.88 Max. -50 -50 -0.25 -0.4 -0.85 -0.95 300 4.5 Unit V V V nA nA V V V V Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2005.01.12 Page No. : 2/4 Test Conditions IC=-10A IC=-1mA IE=-10A VCE=-30V, VBE=3V VEB=-4V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-1V, IC=-100A VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0A,f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% MHz pF BTP3906N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=1V Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2005.01.12 Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Saturation Voltage-(mV) Current Gain---HFE 100 100 10 0.1 1 10 100 1000 Collector Current--- IC(mA) 10 0.1 1 10 100 1000 Collector Current IC-(mA) Saturation Voltage vs Collector Current 10000 VBE(SAT)@IC=10IB Saturation Voltage-(mV) Cutoff Frequency vs Collector Current 1000 VCE=20V Cutoff Frequency(MHz) 100 1000 100 0.1 1 10 100 1000 Collector Current---IC(mA) 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA() BTP3906N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2005.01.12 Page No. : 4/4 A L 3 B 1 2 S Marking: 2A TE V G C D K 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP3906N3 CYStek Product Specification |
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